Micromachined 28-GHz Power Divider in CMOS Technology
نویسندگان
چکیده
A broad-band power divider is presented in CMOS technology. The devices are realized by postprocessing chips that are fabricated in a standard 1.2m CMOS process. Developed postprocessing includes wire bonding for ground equalization, deposition of a stress-compensation layer, and selective etching of the silicon substrate. By employing coupled coplanar transmission lines, the area of dividers is minimized to 0.8 mm 2.1 mm. A 20–35-GHz power divider exhibits a coupling of 3.8 dB 0.6 dB.
منابع مشابه
A 28-36 GHz Optimized CMOS Distributed Doherty Power Amplifier with A New Wideband Power Divider Structure
Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...
متن کاملHigh-Accurate Low-Voltage Analog CMOS Current Divider Modify by Neural Network and TLBO Algorithm
A high accurate and low-voltage analog CMOS current divider which operates with a single power supply voltage is designed in 0.18µm CMOS standard technology. The proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. The proposed divider is modeled with neural network while TLBO algorithm is used to optimize it. The proposed optimiza...
متن کاملHigh-Accurate Low-Voltage Analog CMOS Current Divider Modify by Neural Network and TLBO Algorithm
A high accurate and low-voltage analog CMOS current divider which operates with a single power supply voltage is designed in 0.18µm CMOS standard technology. The proposed divider uses a differential amplifier and transistor in triode region in order to perform the division. The proposed divider is modeled with neural network while TLBO algorithm is used to optimize it. The proposed optimiza...
متن کاملA 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback
This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 – 145.14 GHz) at input power of -3 dBm. To the authors’ best knowledge, this is the highest ...
متن کاملDesign of High-Speed, Low-Power Frequency Dividers and Phase-Locked Loops in Deep Submicron CMOS
Deep submicron CMOS technologies offer the high speed and low power dissipation required in multigigahertz communication systems such as optical data links and wireless products. This paper introduces the design of two communication circuits, namely a 1/2 frequency divider and a phase-locked loop, fabricated in a partially scaled 0.1 m CMOS technology. Configured as a master-slave circuit, the ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2000